Long-Lived Luminescent Re(I) Complexes Containing cis-Carbonyl and Bidentate Phosphine Ligands

Highly emissive Re(I) complexes, hydrophobic cis-Re(CO)₂(c-dppene)(dpphen) and water-soluble cis-Re(CO)₂(c-dppene)(SO₃-dpphen) with a negative charge, were synthesized [where c-dppene is cis-(bis(diphenylphosphino)ethylene, dpphen is 4,7-diphenyl-1,10-phenanthroline, and SO₃-dpphen is its disulfonate derivative]. These Re(I) complexes have significantly higher molar absorption in the 350- to 490-nm region compared to their tricarbonyl Re(I) counterparts and their emission spectra are similar to those of Ru(II) polypyridyl complexes. The luminescence lifetimes of these Re(I) complexes approach 10 s in the absence of oxygen in both aqueous and less polar solvents. The complexes have limiting anisotropy values exceeding 0.3. As both ligands, the diimine and the bidentate phosphine, can be modified by adding different substituents, it should be possible to make cis-Re(CO)₂(diimine)(P-P) derivatives which are capable of labeling biomacromolecules for biochemical and biophysical studies.     

N2分压对ZrN/WN纳米多层膜缺陷性质与力学性能的影响

利用射频磁控溅射系统在不同N₂分压的条件下，制备了一系列ZrN/WN纳米多层膜.借助慢正电子湮没技术分析了样品的缺陷性质，采用纳米压痕仪研究了多层膜的力学性能.结果发现：N₂分压为0.4Pa的多层膜具有最小的空位型缺陷浓度，其中心层和膜基结合层的平均S参数分别为0.4402和0.4641，而较低或较高的N₂分压都可能导致空位型缺陷浓度的增加.随着空位型缺陷浓度的减小，多层膜的硬度和临界载荷增大.对于空位型缺陷浓度最小的多层膜，其硬度和临界载荷达到最大值，分别为34.8GPa和100mN，说明较低的缺陷浓度有利于提高多层膜的力学性能. 关键词： ZrN/WN纳米多层膜 缺陷性质 力学性能 慢正电子湮没     

有限温度下二维Heisenberg铁磁系统的声子衰减

在二维正方Heisenberg铁磁系统的基础上建立了磁振子-声子相互作用模型. 利用松原格林函数理论研究了系统的声子衰减，计算了布里渊区的主要对称点线上的声子衰减曲线. 发现在第一布里渊区，在Δ线上，横向声频支声子无衰减，在Z线上，纵向声频支声子无衰减；横向声频支声子衰减比纵向声频支声子衰减至少大一个数量级，并讨论了各项参数的变化对横向声频支声子衰减与纵向声频支声子衰减的影响. 根据声子衰减与声子寿命的关系，声子衰减与声子态密度的关系，可以讨论横向声频支声子与纵向声频支声子的寿命与态密度. 关键词： 磁振子-声子相互作用 横向声频支声子衰减 纵向声频支声子衰减 声子寿命     

单壁碳纳米管吸附联苯类有机物的荧光光谱分析

利用芳香族化合物对单壁碳纳米管进行了化学修饰,并利用荧光光谱以及时间分辨光谱对修饰后的单壁碳纳米管进行了表征分析.实验发现吸附对三联苯后有1个荧光峰位置发生了蓝移,这说明吸附过程使对三联苯的一些能级分布发生了变化.测量吸附前后对三联苯和蒽甲醇的荧光寿命,发现吸附后的荧光衰减曲线下降趋势更加明显,对曲线进行多指数拟合得出的荧光寿命及其数目发生了变化,分析了可能导致该现象的原因.     

掺铥PLZT透明光电陶瓷的光辐射特性

根据J-O理论研究掺Tm3+的光电陶瓷PLZT的激光潜能，利用Tm3+的420?2000 nm的吸收光谱拟合出了其强度参量，即?2=9.133￡10-21 cm2, ?4=1.529￡10-21 cm2和?6=1.712￡10-21 cm2，进而由强度参量计算了辐射跃迁几率、辐射寿命、荧光分支比和1865 nm荧光峰的受激发射截面等光学参数．     

Structural analysis of Si(1 1 1)-√21 × √21-(Ag, Au) surface by using reflection high-energy positron diffraction

The Au adsorption induced √21 × √21 super-lattice structure on the Si(1 1 1)-√3 × √3-Ag structure has been investigated using reflection high-energy positron diffraction. The height of the Au adatom was determined to be 0.59 Å from the underlying Ag layer from the rocking curve analysis with the dynamical diffraction theory. The adatoms were preferentially situated at the center of the large Ag triangle of the inequivalent triangle structure of the Si(1 1 1)-√3 × √3-Ag substrate. From the intensity distribution in the fractional-order Laue zone, the in-plane coordinate of the Au adatoms was obtained.     

Surface structure of In/Si(1 1 1) studied by reflection high-energy positron diffraction

We have investigated a quasi-one-dimensional structure of In/Si(1 1 1) surface using reflection high-energy positron diffraction (RHEPD), which is sensitive to the topmost surface structure under the total reflection condition. From the rocking curves, we found that In atoms are located at two different vertical positions, i.e., 0.99 Å and 0.55 Å from the Si zigzag chain in both 4 × 1 (210 K) and 8 × 2 (60 K) phases.     

Microstructure characterization of porous silicon as studied by positron annihilation measurements at low temperatures and high vacuum

Atomic scale properties of thin porous silicon (PSi) layers, characterized by the formation of positronium, are investigated using positron annihilation lifetime spectroscopy in the temperature range 20-300 K under 10⁻⁷ Torr vacuum. The longest orthopositronium as well as the shortest parapositronium components are found to have quite low intensities in the thin layer at room temperature. It is also found that at temperatures ≤240 K, these two components do not show up in the spectrum. The reason for this absence of the longest lifetime component is suggested.     

稀有类铥铋离子辐射光谱的相对论识别

用全相对论多组态自洽场方法,计算了高离化类铥铋原子BiXV的1s、2s、2p-、2p、3s、3p-、3p、3d-、3d、4s、4p-、4p、4d-、4d、4f-、4f、5s、5p-、5p、5d-、5d、5f-、5f、5g-、5g、6s、6p-、6p、6d-、6d、6f-、6f、6g-、6g、7s、7p-、7p、7d-、7d、7f-、7f、7g-、7g、8s、8p-、8p、8d-、8d轨道的2249个精细结构能级和辐射寿命以及其他各种跃迁参数.能级和波长的计算值和实验值符合得好.另外还发现了一些辐射寿命较长的亚稳态能级.     

碳纳米管束中的正电子理论

采用中性原子叠加模型和有限差分方法(SNA-FD)计算了大范围内不同管径的单壁碳纳米管束中的正电子情况，发现对于单壁碳纳米管束，正电子的主要湮没区域，湮没对象和正电子寿命随碳纳米管管径的不同而发生规律性变化.计算得到管径范围在0.8—1.6nm的碳纳米管束的正电子寿命范围为332—470ps，与实验测得的394ps符合较好.